FP75R12KT4 - Infineon United Kingdom Sales

BRAND	Infineon
Product	FP75R12KT4
Description	IGBT Silicon Module
Internal code	4672783
Technical specification	Configuration: 3-Phase Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.25 V Continuous Collector Current at 25 C: 150 A Gate-Emitter Leakage Current: 100 nA Pd - Power Dissipation: 385 W

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